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Extra info for Advanced ceramics and novel processing
K. Mukherjee, J. Mater. Res. 11 (1996) 358-362. A. Schneider, A. K. Mukherjee, J. Am. Ceram. Soc. 82 (1999) 761-764.  T. Nishimura, M. -H. Kim, N. Hirosaki, H. Shim, J. Ceram. Process. Res. 3 (2002) 261-264.  X. Xu, T. Nishimura, N. Hirosaki, R. Xie, Y. Zhu, Y. Yamamoto, H. Tanaka, J. Am. Ceram. Soc. 88 (2005) 934-937.  X. Xu, T. Nishimura, N. Hirosaki, R. Xie, Y. Yamamoto, H. Tanaka, Key Eng. Mater. 317-318 (2006) 629-632.  X. Xu, T. Nishimura, N. Hirosaki, R. Xie, Y. Yamamoto, H.
99% up, High Purity Chemicals, Japan. 9%, High Purity Chemicals, Japan. 9% for all samples. This result suggested that 1 vol% Y2O3-Sc2O3 additives were sufficient to densify SiC ceramics to a theoretical density regardless of the β/α phase ratio in the starting composition. The XRD patterns of the samples are shown in Fig. 1. The S10 and S50 samples consisted of 3C as well as 6H and 4H phases whereas S100 sample consisted of 6H and 4H phases. Fig. 1. X-ray diffraction patterns of SiC ceramics: (a) S10, (b) S50, and (c) S100 (refer to Table 1).
Xu, T. Nishimura, N. Hirosaki, R. Xie, Y. Yamamoto, H. Tanaka, Key Eng. Mater. 317-318 (2006) 629-632.  X. Xu, T. Nishimura, N. Hirosaki, R. Xie, Y. Yamamoto, H. Tanaka, Nanotechnology 16 (2005)1569-1573.  X. Xu, T. Nishimura, N. Hirosaki, R. Xie, Y. Yamamoto, H. Tanaka, Acta Mater. 54 (2006) 255-262.  T. Nishimura, X. Xu, K. Kimoto, N. Hirosaki, H. Tanaka, Sci. Tech. Adv. Mater. 8 (2007) 635-643.  M. Yoshimura, O. Komura, A. Yamakawa, Scr. Mater. 44 (2001) 1517-1521.  J. Tatami, M.
Advanced ceramics and novel processing